Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 mm GaInNAs three-quantum-well laser diodes
نویسندگان
چکیده
We report organometallic vapor-phase epitaxy ~OMVPE! growth and optical characteristics of 1.17–1.20 mm double-heterostructure laser diodes with three Ga0.7In0.3N0.003As0.997 ~7 nm!/GaAs~10 nm! quantum wells ~GaInNAs/GaAs QWs!. Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethylhydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17–1.19 mm regime with a full width at half maximum of 33 meV has been routinely achieved. By using three GaInNAs/GaAs QWs as the gain medium of the GaInNAs laser, room temperature operation with a threshold current density of 1.2 kA/cm has been successfully demonstrated. © 1999 American Institute of Physics. @S0003-6951~99!02834-X#
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